Fabrication method for fully landing subminimum features on minimum width lines

摘要

A method for forming a multilayer structure having a dimension at most substantially equal to the minimum printable image wherein a substrate structure including a lithographic feature having a first minimum printable image dimension has a layer of hybrid photoresist disposed thereon above the lithographic feature of the substrate. A mask is provided over the hybrid photoresist layer with the mask having an edge aligned with the lithographic feature to within the tolerance of the semiconductor processing technology. The hybrid photoresist layer is exposed through the mask and developed to provide a window opening in the photoresist layer which is at most substantially equal to the minimum printable image.