| 摘要 |
PROBLEM TO BE SOLVED: To prevent the formation of voids in wiring during the manufacturing process of an electronic device, having a multilayered wiring, while the electromigration resistance of a multilayered wiring structure having a via hole is improved. SOLUTION: In a structure in which a via hole is filled up with an Al-Cu layer 110, the other metallic layer than an Al3 Ti layer 11 is not substantially provided in the bottom section of the via hole. Since Al and Cu atoms can penetrate the layer 111 when electromigration occurs, the flux gradient of the atoms becomes gentle at the boundary between lower and upper-layer wiring in the bottom section of the via hole, and the electromigration resistance of the structure is improved. In addition, since a TiN layer 109 exhibiting a high barrier effect is provided between a Ti layer 108 formed on a second insulating layer 107 and the Al-Cu layer 110, the reaction between Al and Ti is suppressed and the occurrence of voids is prevented in the forming process of a third insulating layer 113. |
