| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor laser which is high in luminous efficacy and output power, by a method wherein Zn is prevented from diffusing into an active layer by enough carrier blocking even if Zn is used as a P-type dopant, and suppressing light absorption in a P-type clad layer to a minimum. SOLUTION: A semiconductor layer is equipped with an active layer 3 and P-type clad layers 5, 6, and 7 formed on an N-type semiconductor substrate 1, wherein the concentration distribution of P-type impurity in the P-type clad layer from the active layer has is maximum value at a position away from the edge of the active layer by 50 to 250 nm. By this setup, the part of the maximum value of the P-type impurity concentration serves to block carriers to the active layer, and the distance between the P-type impurity concentration maximum point and the edge of the active layer is at least 50 nm, so that the P-type impurity can be prevented from being diffused into the active layer.
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