| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and method for growing a chemical gaseous phase for stably forcing a film in desired thickness on plural substrates, by improving the uniformity of the in-batch film thickness of films on substrates at the time of simultaneously operating film formation on the plural substrates for suppressing the variation of in-batch film thickness distribution generated each time the film formation is operated on the plural substrates. SOLUTION: At the time of simultaneously operating film formation on almost 150 wafers in a furnace core pipe 1, a control part 16 is allowed to lean the time change of the in-batch temperature distribution of an in-furnace temperature until the in-furnace storage film thickness is turned into about 1μm after the cleaning processing of the furnace core pipe 1. Heaters 13a-13d are successively controlled by the control part 16 according to a film formation sequence accumulative time so that the in-furnace actual temperature can be turned into the in-batch temperature distribution learned by the control part 16, and the film forming speeds of films on wafers 10 can be made almost equal to each other in almost 150 wafers.
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