| 摘要 |
PROBLEM TO BE SOLVED: To realize lowering of threshold and improvement in the temperature characteristic and maximum optical output by inserting a turn-off-preventing carrier recombination layer, without the disadvantage that the internal loss increases in a semiconductor laser having a selectively growth pnpn thyristor structure. SOLUTION: On a p-type InP substrate with a buffer layer, a p-clad layer 4, SCH-strained MQW layer 5, n-clad layer 10 are selectively grown into a trapezoidal shape to form an optical wave guide for a light of 1.3 μm at the right and left of which a p-InP buried layer 12, n-InP layer 13 of 0.4 μm, n-InP layer 14 of 1.2 μm, and 1.3 μm composition. 4-element well/1.05 μm compsn. four element barrier SCH-MQW carrier recombination layer 15 of 0.1 μm exist in the ascending order, and an n-InP clad buried layer 17 and n-InGaAsP contact layer 18 of 0.4 μm thereon exist in the form embedding all of them. |
