| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride compound semiconductor light emitting element which can be used more suitably for an outdoor full color display or the like, by raising the intensity of light emission more. SOLUTION: In a GaN compound semiconductor light emitting element where at least an n-type clad layer 3 and a p-type clad layer 5 and, between these, a light emitting layer 4 are stacked on a substrate 1, the light emitting layer 4 is made a stack of an n-type layer 41 and a p-type layer 42, or a stack of these and an i-type layer stacked between these layers 41 and 42, and a p-n junction is made within the light emitting layer 4 itself. As a result, the implantation of electrons and positive holes into the light emitting layer 4 is accelerated, and the intensity of light emission by the light emitting layer 4 is raised. |
