发明名称 |
Level converting circuit having a high switching speed |
摘要 |
The level converting circuit has first and second transistors of a first conductivity type. The control terminals of the transistors are connected to a first supply potential via the load path of the respective other transistor. A load path of a third transistor of a second conductivity type is connected between the control terminal of the first transistor and a reference-ground potential. The control terminal of the third transistor is coupled to the input of the level converting circuit. A node between the second and third transistors forms the output of the circuit. A fourth transistor of the second conductivity type has a load path connected between the control terminal of the second transistor and the control terminal of the third transistor. A capacitance is connected between the control terminals of third and fourth transistors. A limiter circuit is connected upstream of the control terminal of the fourth transistor.
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申请公布号 |
US5994944(A) |
申请公布日期 |
1999.11.30 |
申请号 |
US19980150789 |
申请日期 |
1998.09.10 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
MANYOKI, ZOLTAN |
分类号 |
H03K19/0185;H03K19/017;(IPC1-7):H03L5/00 |
主分类号 |
H03K19/0185 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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