发明名称 Level converting circuit having a high switching speed
摘要 The level converting circuit has first and second transistors of a first conductivity type. The control terminals of the transistors are connected to a first supply potential via the load path of the respective other transistor. A load path of a third transistor of a second conductivity type is connected between the control terminal of the first transistor and a reference-ground potential. The control terminal of the third transistor is coupled to the input of the level converting circuit. A node between the second and third transistors forms the output of the circuit. A fourth transistor of the second conductivity type has a load path connected between the control terminal of the second transistor and the control terminal of the third transistor. A capacitance is connected between the control terminals of third and fourth transistors. A limiter circuit is connected upstream of the control terminal of the fourth transistor.
申请公布号 US5994944(A) 申请公布日期 1999.11.30
申请号 US19980150789 申请日期 1998.09.10
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 MANYOKI, ZOLTAN
分类号 H03K19/0185;H03K19/017;(IPC1-7):H03L5/00 主分类号 H03K19/0185
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