发明名称 |
CMOS twin-tub negative voltage switching architecture |
摘要 |
A CMOS twin-tub negative voltage switching architecture is for a non-volatile memory device and includes a negative voltage multiplier for generating a increased voltage value starting from a single main power supply. A voltage regulator feedback is connected to the voltage multiplier for regulating the generated negative voltage value; and a plurality of independent switch circuits each one receiving as an input the negative voltage value and producing as an output a predetermined local negative voltage.
|
申请公布号 |
US5994948(A) |
申请公布日期 |
1999.11.30 |
申请号 |
US19970921930 |
申请日期 |
1997.08.27 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
BARTOLI, SIMONE;RUSSO, ANTONIO;SALI, MAURO LUIGI |
分类号 |
G11C16/30;(IPC1-7):G05F1/10 |
主分类号 |
G11C16/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|