发明名称 CMOS twin-tub negative voltage switching architecture
摘要 A CMOS twin-tub negative voltage switching architecture is for a non-volatile memory device and includes a negative voltage multiplier for generating a increased voltage value starting from a single main power supply. A voltage regulator feedback is connected to the voltage multiplier for regulating the generated negative voltage value; and a plurality of independent switch circuits each one receiving as an input the negative voltage value and producing as an output a predetermined local negative voltage.
申请公布号 US5994948(A) 申请公布日期 1999.11.30
申请号 US19970921930 申请日期 1997.08.27
申请人 SGS-THOMSON MICROELECTRONICS S.R.L. 发明人 BARTOLI, SIMONE;RUSSO, ANTONIO;SALI, MAURO LUIGI
分类号 G11C16/30;(IPC1-7):G05F1/10 主分类号 G11C16/30
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