发明名称 Achievement of top rounding in shallow trench etch
摘要 A process for forming a shallow trench having steep sidewalls near its bottom and sloping sidewalls at the top is described. The process is in 3 stages. The first stage involves methane trifluoride, carbon tetrafluoride, argon, and oxygen. The second stage involves methane trifluoride and methane monofluoride, while the third stage involves hydrogen bromide, chlorine, and helium/oxygen. If the ratio of the various components at each stage is carefully controlled along with other variables such as discharge power, pressure, and duration, the trench profile described above is obtained with a minimum of deposited polymer material on the sidewalls.
申请公布号 US5994229(A) 申请公布日期 1999.11.30
申请号 US19980005567 申请日期 1998.01.12
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. 发明人 CHEN, CHAO-CHENG;TSAI, CHIA-SHIUNG
分类号 H01L21/3065;H01L21/762;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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