发明名称 |
Add one process step to control the SI distribution of Alsicu to improve metal residue process window |
摘要 |
A new method of metal deposition with reduced metal residue after metal etching by cooling the wafer before metal deposition is described. A first patterned conducting layer is provided overlying a dielectric layer on the surface of a semiconductor substrate. The wafer is cooled to a temperature of less than about 20 DEG C. Thereafter, a metal layer is deposited overlying the first patterned conducting layer. The metal layer is etched away where it is not covered by a mask to complete formation of the metal line. Cooling of the wafer before metal deposition decreases the metal residue found after metal etching.
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申请公布号 |
US5994219(A) |
申请公布日期 |
1999.11.30 |
申请号 |
US19980090498 |
申请日期 |
1998.06.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN, HSIANG-LIN;CHEN, HAN-CHUNG |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L21/441 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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