摘要 |
A CMOS device includes a first conductive type channel MOSFET having first side-wall spacers on side surfaces and having a source and drain region of an LDD structure, and a second conductive type channel MOSFET having second side-wall spacers on side surfaces and having a source and drain region of a single drain structure, wherein a width of the first side-wall spacers is larger than that of the second side-wall spacers, restraining the short channel effect and hot carrier effect as well.
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