| 发明名称 |
Method of manufacturing mirror-polished silicon wafers, and apparatus for processing silicon wafers |
| 摘要 |
Two or more processes selected from heat treatment for anihilation of oxygen donors, formation of a gettering region, and formation of a dopant-volatilization-prevention film are simultaneously performed in a common apparatus in accordance with the specifications of silicon wafers to be manufactured. Therefore, productivity can be improved.
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| 申请公布号 |
US5993493(A) |
申请公布日期 |
1999.11.30 |
| 申请号 |
US19970910396 |
申请日期 |
1997.08.13 |
| 申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
TAKAMIZAWA, SHOICHI;KOBAYASHI, NORIHIRO |
| 分类号 |
H01L21/302;H01L21/00;H01L21/02;H01L21/306;H01L21/31;H01L21/322;H01L21/324;H01L21/677;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/302 |
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