发明名称 X-ray reduction exposure apparatus and device manufacturing method using the same
摘要 A deflection mirror is disposed before an X-ray mask so as to reflect an X-ray beam and to project it to the X-ray mask. The X-ray mask is disposed opposed to a wafer with a distance D therebetween, and the X-ray beam reflected by the X-ray mask is projected onto the wafer through a reduction projection optical system. The deflecting mirror is disposed, in an example, at a position satisfying a relation D>L>d/(tan delta 1+tan delta 2) where L is the distance from the X-ray mask to an edge of the deflection mirror closer to the path of the X-ray beam reflected by the X-ray mask, d is the width of irradiation of the X-ray beam upon the X-ray mask, and delta 1 and delta 2 are incidence angles of the X-ray beam at upper and lower edges of the irradiation width d, respectively, upon the X-ray mask. This assures a compact structure wherein, even when a wafer of a large diameter is used, illumination light to the mask is not intercepted.
申请公布号 US5995582(A) 申请公布日期 1999.11.30
申请号 US19970835721 申请日期 1997.04.10
申请人 CANON KABUSHIKI KAISHA 发明人 TERASHIMA, SHIGERU;TSUKAMOTO, MASAMI
分类号 G21K5/02;G03F7/20;G21K1/06;H01L21/027;(IPC1-7):G21K5/00 主分类号 G21K5/02
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