| 摘要 |
1300174 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 12 June 1970 [30 June 1969] 28501/70 Heading H1K A semi-conductor device forming an inverse planar transistor comprises an N type silicon substrate 10, an N type epitaxial layer 14, a P+ type buried region 13, and an annular, diffused P+ type region 15 reaching down to the buried region 13 from the outer surface of the layer 14, and enclosing a portion 16 of the layer 14, which portion 16 forms the base of a transistor, in combination with a heavily doped contact region 17, the regions 13 and 15 forming the emitter, and the collector being formed by a metal contact 24 via a Schottky-Barrier collector base junction 26. The contacts 22, 23 and 24, which may be formed simultaneously, may comprise platinum alloyed to the body by sintering. Alternatively chromium, molybdenum, nickel or palladium may be utilized, and aluminium interconnections 25 may also be provided. Dopants may be arsenic, boron indium or phosphorus. In an alternative embodiment the Schottky- Barrier collector junction may be replaced by a diffused junction formed by a P + type collector region (27), step 8a (not shown). |
