| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a Schottky barrier diode having low ON voltage in which leak current is suppressed in a reverse bias and a fabrication method therefor. SOLUTION: A p<+> buried region 33 is buried in an n-epitaxial layer 32 on an n<+> substrate 31. An anode electrode 35 forming a Schottky junction is provided on the surface of the n-epitaxial layer 32 and also connected with the surface of a p<+> contact region 34 formed on the surface of the n-epitaxial layer 32. More specifically, the p<+> buried region 33 is brought to same potential as the anode electrode 35 through the p<+> contact region 34.</p> |
