| 摘要 |
A wafer defect detection apparatus includes a moving device for moving the wafer in a parallel direction to the wafer's surface, a light-emitting device for emitting an incident light on the surface of the wafer, a light-receiving device for receiving a reflected light reflected by the (111) crystal plane of the wafer, and a rotating device for rotating the wafer with respect to a line perpendicular to the wafer surface as a rotation axis, the [001] direction of the wafer being parallel to the normal line direction of the surface of the wafer. The light-emitting device is arranged in the direction tilted by (57.7 DEG - alpha ) from the rotation axis and the incident light impinges on the position where the rotation axis intersects the surface of the wafer. The light-receiving device is arranged in the direction tilted by (54.7 DEG + alpha ) in the direction same as that of the light-emitting device from the rotation axis, and the value of alpha is -35.3 DEG to 35.3 DEG excluding 0 DEG .
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