| 摘要 |
A dry etching method for a conductive material layer is disclosed. The dry etching method has the steps of: forming an oxygen-containing antireflection film on a surface of a conductive material layer; forming a patterned mask layer on the antireflection film; forming a sidewall protection film on a sidewall of the mask layer; and etching the conductive material layer using the mask layer having the sidewall protection film formed thereon. The sidewall protection film is formed after the antireflection film is patterned using the mask layer. The antireflection film is patterned after the sidewall protection film is formed, with the sidewall protection film left on the sidewall of the antireflection film. The sidewall protection film is formed by using at least one of sulfur based compound and sulfur nitride based compound. The antireflection film is composed of an SiON based material. The conductive material layer is composed of a material selected from the group consisting of a polycide film, an Al based alloy material layer, a Cu based alloy material layer and a refractory metal layer. The conductive material layer is formed on a semiconductor substrate having an insulating film formed on a surface thereof. The conductive material layer is formed on an insulating film having a barrier metal layer formed on a surface thereof.
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