| 摘要 |
PROBLEM TO BE SOLVED: To provide the method for manufacturing an n-type ZnTe semiconductor of low resistivity with good reproducibility, and provide an electrode material which is superior in ohmic contact with the n-type ZnTe semiconductor of low resistivity. SOLUTION: In a method for manufacturing an n-type ZnTe semiconductor on a substrate by making Zn raw gas, Te raw gas and Al doping gas or Cl doping gas react by an organic metal vapor growth method, the raw gas is supplied so that mole ratio of Zn and Te accounted in the raw gas is Te/Zn>=1.1 or Te/Zn<=0.9. Furthermore, an n-type ZnTe semiconductor element having good ohmic contact can be obtained, by forming a W electrode or an In alloy electrode containing Hg on the n-type ZnTe semiconductor. |
