| 摘要 |
PROBLEM TO BE SOLVED: To provide a solar cell having a I-III-VI2 -based compound semiconduc tor at low costs which can prevent occurrence of a short-circuit even if an area increases. SOLUTION: In a solar cell 10 sequently having a I-III-VI2 -based compound semiconductor film 3, a II-VI-based compound semiconductor film 4, and transparent conductive films 5, 6, a film thickness of the II-VI-based compound semiconductor film is set to 2500 to 10000 Å (In the formula, I, II, III and VI are the I group elements, the II group elements, the III group elements and the VI group elements of the periodic law, respectively.). The I-III-VI2 -based compound semiconductor film is constituted by a compound composed of, for example, CuInSe2 , CiInS2 , Cu(In, Ga)Se2 , CuIn(S, Se)2 , Cu(In, Ga)(Se, S)2 or Cu(In,Ga)S2 , and also the II-VI-based compound semiconductor film is constituted by a compound composed of, for example, CdS, ZnS, ZnSe, CdSe, ZnTe or ZnO. |
