A method of planarizing a semiconductor device using a high density plasma system

摘要

A method for planarizing a layer of material on a semiconductor device is disclosed, which planarizes a layer on a semiconductor device using a high density plasma system, and uses a sacrificial layer having a desirable etch to deposition rate. Additionally, the method for planarizing a layer can be easily incorporated into the semiconductor fabrication process, and is capable of achieving both local and global planarization.