| 摘要 |
PURPOSE:To dispose light-emitting elements having the simultaneity and parallelism of light with high density without increasing the quantity of wirings by forming a channel for transferring charges, an insulator and an electrode for transferring charges onto a semiconductor substrate and forming a light-emitting layer onto the same semiconductor substrate. CONSTITUTION:A plurality of electrode patterns 13, 14 for transferring charges are shaped onto the top face of an integrated type light-emitting device 10, and a charge generating section 12 is formed at one end section of the top face. That is, a P-InGaAsP light-emitting layer 15 and a P-InP channel 16 for transferring charges are shaped onto a P-InP substrate 11 as a semiconductor substrate in the light-emitting device 10. Electrodes 14a, 14b, 14c for transferring charges are formed onto the channel 16 for transferring charges through an Al2O3 film 17 as an insulator. A device having the same sign as these electrodes is connected by wirings on the surface of the substrate. Accordingly, an arbitrary pattern can be light-emitted simultaneously. |
