| 摘要 |
PROBLEM TO BE SOLVED: To provide a focus position measurement method capable of eliminating the restriction of measuring a pattern after development or the like, eliminating the waste of time of graphing a length measured result or the like, and reducing dimension dispersion or the like between respective wafers or between lots. SOLUTION: The pattern P3 of a latent image capable of obtaining a best exposure condition is secured as a data base beforehand, the patterns P1 ', P2 ',... obtained by changing the focus position of respective devices or wafers and performing exposure are pattern-collated with the pattern P3 of the data base, and the focus position f2 ' corresponding to the latent image pattern P2 ' in the case that both patterns match is set as a best focus. |
