发明名称 PRODUCTION OF CARBON NITRIDE FILM
摘要 PROBLEM TO BE SOLVED: To synthesize compounds from carbon which has low reactivity and nitrogen, to allow a film to have high adhesive power and to improve its wear resistance by simultaneously executing the irradiation of ions contg. nitrogen and the irradiation of ions contg. carbon and forming a film-shaped compd. of carbon and nitrogen on a base material. SOLUTION: In a vacuum vessel 11 of about 2×10<-6> Torr or below, a base material such as high speed tool steel or the like subjected to ultrasonic cleaning with an organic solvent is arranged on a substrate holder 12. To this base material 13, the irradiation of ions contg. nitrogen and the irradiation of ions contg. carbon are simultaneously executed from an ion source 14, and mixed ions 20 of nitrogen and carbon are vapor-deposited on the base material 13. As this ion feeding source raw materials, the ones of optional forms contg. nitrogen and carbon as the ions and capable of ionization such as nitrogen, methane or the like are used. Moreover, the irradiation energy of the ions is preferably controlled to 3 keV to suppress ion etching. By changing the ratio of the ion feeding raw materials from the ion source 14, a carbon nitride film having an optional compsn. can be formed on the base material 13.
申请公布号 JPH11323530(A) 申请公布日期 1999.11.26
申请号 JP19980132822 申请日期 1998.05.15
申请人 MITSUBISHI HEAVY IND LTD 发明人 WATANABE TOSHIYA;YAMASHITA NOBUKI;HOSHINA RYOSUKE
分类号 C23C14/06;C23C14/32;(IPC1-7):C23C14/06 主分类号 C23C14/06
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