发明名称 POSITIVE PHOTORESIST COMPOUND FOR EXPOSURE OF FAR ULTRAVIOLET RADIATION
摘要 PROBLEM TO BE SOLVED: To provide a photoresist having an excellent pattern profile and an excellent substrate close contact characteristic by making resin that is dissolved by the action of acid to thereby increase its soluble characteristic to alkali, contain a specified polymer. SOLUTION: The resin that is dissolved by the action of acid to increase its soluble characteristic to alkali contains a repeated unit represented by formulae I, II and a copolymer containing a group dissolved by the action of acid. In the formulae I, II, R1 , R2 represent a hydrogen atm, cyano group, -COOR5 , -CO-NH-R6 and the like, R5 is alkyl group, ring-shaped hydrocarbon group, or the like, R11 , R12 are a hydrogen atom, cyano group, hydrogen group and the like, X is oxygen atom, sulfur atom or the like, A is sigle bond or divalent connection group, Z is a group of atoms for forming a fat ring type structure together with two carbon atoms (C-C).
申请公布号 JPH11327147(A) 申请公布日期 1999.11.26
申请号 JP19980136918 申请日期 1998.05.19
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO
分类号 C08F222/10;C08F232/00;G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 C08F222/10
代理机构 代理人
主权项
地址