| 摘要 |
PROBLEM TO BE SOLVED: To obtain a transparent electrode low having electric resistivity and high visible ray transmissivity, easy to be etched and excellent in workability by allowing it to have a compsn. essentially consisting of the oxide of In, furthermore contg. a specified amt. of Ge and contg. a specified amt. of Sn according to necessary and composing its structure of amorphous one. SOLUTION: In a transparent electrically conductive film essentially consisting of the oxide of In, by atom, 2 to 12% Ge is incorporated to form the structure of the film into the amorphous one, and, if required, <=5% Sn is moreover incorporated to improve its workability. The amorphous structure of the film can be obtd., at the time of sputtering an In2 O3 target contg. a prescribed amt. of Ge in an inert gas atmosphere contg. gaseous oxygen and forming a film on a substrate, by controlling film forming conditions such as the film forming temp. the oxygen partial pressure, the film forming rate or the like. In this way, the transparent electrically conductive film having >=80% visible ray transmissivity and <=0.01Ω. cm electric resistivity is formed and is made capable of corresponding to high precision suitable for a transparent displaying electrode such as a transistor type liq. crystal display.
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