| 摘要 |
PROBLEM TO BE SOLVED: To improve both the resolution and sensitivity in a resist material used for fine pattern formation and a patterning method for the resist. SOLUTION: The method comprises the steps of: applying a resist 3 which contains a polymer with a substituent which decomposes by an acid, an acid generating agent which generates an acid in response to ionizing radiation, and a salt of quinuclidine, 1,4-diazabicyclo-[2,2,2]octane or derivatives thereof and an acid, on a base 2; exposing the resist 3 with the ionizing radiation; and developing the resist 3 with an alkaline aqueous solution. |
