| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress fatal defects due to a leak, etc., resulting from a defect of a TFT even in case of pattern deviation at the time of contact hole formation and to suppress the defects without decreasing the aperture rate of the display device. SOLUTION: An inorganic insulating film 110 is formed covering the entire surface of an organic insulating film 10, and a contact hole for connecting a pixel electrode 11 to a drain electrode 8 is formed so as to have a size smaller than that of a contact hole formed on the insulating film 10. The contact hole is formed on the drain electrode 8 other than on an n<+> Si layer 9. Further, the contact hole is formed nearby a TFT(thin film transistor) in a pixel area.</p> |
