| 摘要 |
A nitride programmable read only memory (NROM) cell with a pocket implant (120) self-aligned to at least one bit line junction (102, 104). Alternatively, the bit line junction(s) (102, 104) can have a thin area of effective programming and erasing located nearby. Further alternatively, the channel (100) can have a threshold voltage level implant which has a low voltage level in a central area of the channel (100) and which has a peak of high voltage level near at least one of the bit line junctions (102, 104). With one pocket implant, the NROM cell stores one bit. With two pocket implants, the NROM cell stores two bits.
|
