发明名称 |
Verfahren zur Herstellung einer Silicid-Halbleiterelement mit Polysilizium-Bereiche |
摘要 |
A method of fabricating a polycide semiconductor element, the method including the steps of:- (a) forming a lift-off mask on a first region of a layer of polysilicon; (b) implanting a first dopant into second regions of the polysilicon which are adjacent the first region, the first region being masked from implantation by the lift-off mask; (c) forming a layer of silicide over the implanted regions and the lift-off mask; and (d) removing the lift-off mask and the respective part of the layer of silicide which is formed thereover thereby to expose the first region. The invention also provides a semiconductor element. h |
申请公布号 |
DE3856350(T2) |
申请公布日期 |
1999.11.25 |
申请号 |
DE19883856350T |
申请日期 |
1988.04.12 |
申请人 |
STMICROELECTRONICS LTD., MARLOW |
发明人 |
CAMPBELL, RICHARD NORMAN;THOMPSON, MICHAEL KEVIN;SMITH, ELIZABETH ANN |
分类号 |
H01L27/04;H01L21/02;H01L21/027;H01L21/28;H01L21/822;H01L21/8244;H01L27/11;H01L29/40 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|