发明名称 |
Large area membrane mask, especially a lithographic stencil mask, is produced from a multilayer semiconductor wafer |
摘要 |
Large area membrane mask production from a multilayer semiconductor wafer involves locally removing a support layer by two steps in a mechanically sealed etching cell and/or with a protective coating. A large area membrane mask is produced from a multilayer semiconductor wafer by structuring a semiconductor membrane layer above a stop layer and removing regions of a semiconductor support layer and the stop layer. The novelty is that removal of the support layer comprises two steps using a mechanically sealed etching cell or a protective coating or comprises one step using a mechanically sealed etching cell and another step using a protective coating.
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申请公布号 |
DE19913683(A1) |
申请公布日期 |
1999.11.25 |
申请号 |
DE1999113683 |
申请日期 |
1999.03.25 |
申请人 |
INSTITUT FUER MIKROELEKTRONIK STUTTGART STIFTUNG DES OEFFENTLICHEN RECHTS |
发明人 |
BUTSCHKE, JOERG;LETZKUS, FLORIAN;PENTEKER, ELISABETH;SPRINGER, REINHARD;HOEFFLINGER, BERND;LOESCHNER, HANS |
分类号 |
G03F1/14;G03F1/16;G03F1/20;G03F1/22;H01L21/027;(IPC1-7):H01L21/306;H01L49/00 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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