发明名称 Large area membrane mask, especially a lithographic stencil mask, is produced from a multilayer semiconductor wafer
摘要 Large area membrane mask production from a multilayer semiconductor wafer involves locally removing a support layer by two steps in a mechanically sealed etching cell and/or with a protective coating. A large area membrane mask is produced from a multilayer semiconductor wafer by structuring a semiconductor membrane layer above a stop layer and removing regions of a semiconductor support layer and the stop layer. The novelty is that removal of the support layer comprises two steps using a mechanically sealed etching cell or a protective coating or comprises one step using a mechanically sealed etching cell and another step using a protective coating.
申请公布号 DE19913683(A1) 申请公布日期 1999.11.25
申请号 DE1999113683 申请日期 1999.03.25
申请人 INSTITUT FUER MIKROELEKTRONIK STUTTGART STIFTUNG DES OEFFENTLICHEN RECHTS 发明人 BUTSCHKE, JOERG;LETZKUS, FLORIAN;PENTEKER, ELISABETH;SPRINGER, REINHARD;HOEFFLINGER, BERND;LOESCHNER, HANS
分类号 G03F1/14;G03F1/16;G03F1/20;G03F1/22;H01L21/027;(IPC1-7):H01L21/306;H01L49/00 主分类号 G03F1/14
代理机构 代理人
主权项
地址