发明名称 Thermomechanisches Verfahren zum Planarisieren einer fototechnisch strukturierbaren Schicht, insbesondere Verkapselung für elektronische Bauelemente
摘要 According to the inventive thermomechanical method for planing a resist layer which is applied on a partially raised supporting surface, a resist structure, especially an encapsulation for electronic components, is obtained. To this end, a dry resist film (2) which is comprised of a composite made of a temperature resistant protective film (3) and of a photosensitive layer (4) is applied with the photosensitive layer (4) thereof on the supporting surface (6). The dry resist film (2d) is planed using pressure and heat, whereupon the photosensitive layer is exposed. Afterwards, the protective film (3) is removed and the photosensitive layer is developed.
申请公布号 DE19820049(A1) 申请公布日期 1999.11.25
申请号 DE19981020049 申请日期 1998.05.05
申请人 SIEMENS MATSUSHITA COMPONENTS GMBH & CO. KG 发明人 FUERBACHER, BRUNO
分类号 G03F7/004;G03F7/38;H01L21/027;H01L21/56;H03H3/08;H03H9/05;(IPC1-7):G03F7/00;H03H9/10;H03H9/25 主分类号 G03F7/004
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