发明名称 |
Werkwijze voor het vormen van een geleidende structuur. |
摘要 |
The method of forming a conducting structure consists in applying to a substrate a 2 to 20 nm thick layer of a material transformable into conducting one under the effect of radiation, and irradiating the layer of the material with a modulated beam of charged particles, with the result that the material of the layer on each irradiated area thereof is transformed into a conducting component forming on the substrate a plurality of conducting structure elements, and a nonconducting component which is displaced into the substrate material. |
申请公布号 |
NL1012117(A1) |
申请公布日期 |
1999.11.24 |
申请号 |
NL19991012117 |
申请日期 |
1999.05.21 |
申请人 |
BORIS ARONOVICH GUROVICH;DMITRY IOSIFIVICH DOLGY;EVGENY PAVLOVICH VELIKHOV;EVGENIA ANATOLIEVNA KULESHOVA;BORIS ARONOVICH ARONZON;EVGENY ZALMANOVICH MEILIKHOV;EVGENY PETROVICH RYAZANTSEV;VLADIMIR VASILIEVICH RYLKOV;KIRILL EVGENIEVICH PRIKHODKO;ALEXANDR GRIGORIEVICH DOMANTOVSKY;YAROSLAV IGOREVICH SHTROMBAKH;EVGENY DMITRIEVICH OLSHANSKY |
发明人 |
BORIS ARONOVICH GUROVICH;DMITRY IOSIFIVICH DOLGY;EVGENY PAVLOVICH VELIKHOV;EVGENIA ANATOLIEVNA KULESHOVA;BORIS ARONOVICH ARONZON;EVGENY ZALMANOVICH MEILIKHOV;EVGENY PETROVICH RYAZANTSEV;VLADIMIR VASILIEVICH RYLKOV;KIRILL EVGENIEVICH PRIKHODKO;ALEXANDR GRIGORIEVICH DOMANTOVSKY;YAROSLAV IGOREVICH SHTROMBAKH;EVGENY DMITRIEVICH OLSHANSKY |
分类号 |
H01L21/263;H01L21/768;(IPC1-7):H01L21/441;H01L21/26 |
主分类号 |
H01L21/263 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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