发明名称 HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED COMPACT AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To produce an Si3 N4 sintered compact having high thermal conductiv ity and high mechanical strength, which is produced by a method excellent in productivity. SOLUTION: This sintered compact consists of a &beta;-form crystalline phase of Si3 N4 particles, which has <=0.2 deg. half width of X-ray diffraction peak of (500) face and (330) face of Si3 N4 , and a boundary layer contg. 1-20 wt.% at least one kind of rear earth of Sm, Yb, Y, Er, Gd in terms of each oxide compd. The sintered compact is produced by mixing Si powder and rear earth oxide powder and, after nitridation treatment by heating at a temp. rising rate of 0.2-0.6 deg.C in a temp. range of 1220-1320 deg.C, sintering it at 1,650-1,900 deg.C in nitrogen atmosphere.
申请公布号 JPH11322438(A) 申请公布日期 1999.11.24
申请号 JP19990010241 申请日期 1999.01.19
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MIYANAGA TOMOMASA;ITO AI
分类号 C04B35/584;C04B35/591 主分类号 C04B35/584
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