发明名称 |
Semiconductor laser having effective output increasing function |
摘要 |
<p>Disclosed is a semiconductor laser capable of preventing diffusion of a p-type dopant to an active layer while performing sufficient carrier blocking, even when Zn is used as a p-type dopant, and obtaining high emission efficiency and high output by minimizing light absorption in a p-type cladding layer. This semiconductor laser includes an active layer (3) and p-type cladding layer (5, 6, 7) on an n-type semiconductor substrate (1). The concentration distribution of a p-type dopant from the active layer (3) to the p-type cladding layer (5, 6, 7) has a maximum value at a distance of 50 to 250 nm from the end of the active layer (3). <IMAGE></p> |
申请公布号 |
EP0959540(A2) |
申请公布日期 |
1999.11.24 |
申请号 |
EP19990109559 |
申请日期 |
1999.05.12 |
申请人 |
ANRITSU CORPORATION |
发明人 |
MORI, HIROSHI;KANAYA, YASUHIRO;NAGASHIMA, YASUAKI;KIKUGAWA, TOMOYUKI;NAKANO, YOSHINORI |
分类号 |
H01S5/00;B82Y20/00;H01S5/227;H01S5/30;H01S5/32;H01S5/343;(IPC1-7):H01S3/19;H01L33/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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