| 摘要 |
PROBLEM TO BE SOLVED: To provide a table for a wafer polishing device to be excellent in heat resistance, thermal impact resistance, wear resistance, and corrosion resistance, and cope with an increase in the bore of a semiconductor wafer, improvement of precision, and enhancement of quality. SOLUTION: This table 2 constitutes a wafer polishing device 1 togetherwith a wafer holding plate 6. By bringing a semiconductor wafer 5, held at the holding surface 6a of a plate 6, into contact with the polishing surface 2a of this table 2, polishing is performed. This table 2 is a dense substance made of a silicon carbide sintered substance having density of at least 2.7 g/cm<3> or thermal conductivity is at least 30 w/mK. |
