| 摘要 |
PROBLEM TO BE SOLVED: To prevent the entitled sensor from receiving dielectric breakdown caused by static electricity generated at the time of sensing by providing ground electrodes exposed arranged on a passivation film surface and allowing a capacity detecting means to detect a capacity between each of the ground electrode and sensor electrode. SOLUTION: The passivation film 107 is formed so as to cover the sensor electrodes 105 and the top parts of the ground electrodes are exposed on the surface of this film 107. In this case, the electrodes 105 are plurally arranged at the intervals of 150 μm. In addition, the film 107 consists of an insulating matter of about 4.0 dielectric constant and a film thickness on the electrodes 105 is about 5 μm. In addition, sensing units 108 are formed on a semiconductor substrate 101. These units 108 are connected to the respective electrodes 106 and 105 through a wire 103, etc., and detect capacity between each the electrode 106 and each sensor electrode 105. |
