发明名称 CHEMICAL MACHINE POLISHING METHOD AND CHEMICAL MACHINE POLISHING DEVICE USING SAME
摘要 PROBLEM TO BE SOLVED: To improve flatness of a substrate to be processed and uniformity in the surface of the substrate to be processed and uniformity of a surface between the substrates to be processed. SOLUTION: This chemical machine polishing device comprises a platen; a belt-form polishing pad 32 rotatable centering around a belt form rotary shaft 44 serving as an axis; and a dresser 43 to dress the surface of the polishing pad 32. The polishing pad 32 is formed that two belt-form rotary shafts 44 are vertically arranged on the surface of a substrate 34 to be processed, and the under surface of the polishing pad 32 is forced into pressure contact with the surface of the substrate 34 to be processed. A contact area between the polishing pad 32 and the substrate 34 to be processed is smaller than the upper surface of the substrate 34 to be processed. Thus, regarding the warp and the swell of the substrate 34 to be processed, the polishing pad 32 follows the surface of the substrate 34 to be processed and flatly and uniformly polishes the interior of the surface of the substrate 34 to be processed.
申请公布号 JPH11320384(A) 申请公布日期 1999.11.24
申请号 JP19980130389 申请日期 1998.05.13
申请人 SONY CORP 发明人 NAKAJIMA HIDEHARU
分类号 B24B53/017;H01L21/304 主分类号 B24B53/017
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