发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device comprising: a silicon nitride film formed on a semiconductor substrate having a first wiring layer; a first silicon oxide film formed on said silicon nitride film; and a second silicon oxide film formed on said first silicon oxide film by way of an atmospheric pressure CVD process using tetraethyl orthosilicate, siloxane, or disilazane as a source material.
|
申请公布号 |
US5990541(A) |
申请公布日期 |
1999.11.23 |
申请号 |
US19950432521 |
申请日期 |
1995.05.01 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
SAITO, SATOSHI;HARAZONO, TOYOHIRO |
分类号 |
H01L21/3205;H01L21/316;H01L21/318;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|