发明名称 |
Methods of making high voltage GaN-AlN based semiconductor devices and semiconductor devices made |
摘要 |
The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.
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申请公布号 |
US5990531(A) |
申请公布日期 |
1999.11.23 |
申请号 |
US19970968680 |
申请日期 |
1997.11.12 |
申请人 |
PHILIPS ELECTRONICS N.A. CORPORATION |
发明人 |
TASKAR, NIKHIL R.;MENSZ, PIOTR M.;KHAN, BABAR A. |
分类号 |
H01L29/20;H01L21/285;H01L21/335;H01L29/10;H01L29/51;H01L29/78;H01L29/786;H01L29/80;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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