发明名称 |
Ferroelectric thin film and method of manufacturing the same |
摘要 |
A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, [(1-x).Pb1-yLayTi1-y/4O3+x.MgO], where x=0.01 DIFFERENCE 0.10 and y=0.05 DIFFERENCE 0.25 can be manufactured.
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申请公布号 |
US5989395(A) |
申请公布日期 |
1999.11.23 |
申请号 |
US19960730315 |
申请日期 |
1996.10.11 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TOMOZAWA, ATSUSHI;FUJII, SATORU;FUJII, EIJI;TAKAYAMA, RYOICHI;KOBUNE, MASAFUMI;FUJII, SATOSHI |
分类号 |
C04B35/472;C23C14/08;C23C14/34;C30B23/02;H01L37/02;H01L41/24;H01L41/316;(IPC1-7):C23C14/34 |
主分类号 |
C04B35/472 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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