发明名称 Enhanced signal processing random access memory device utilizing a DRAM memory array integrated with an associated SRAM cache and internal refresh control
摘要 An enhanced digital signal processing random access memory device utilizing a highly density DRAM core memory array integrated with an SRAM cache and internal refresh control functionality which may be provided in an integrated circuit package which is pin-compatible with industry standard SRAM memory devices. The memory device provides a high speed memory access device of particular utility in conjunction with DSP processors with performance equivalent to that of SRAM memory devices but requiring a significantly small die size which allows for the provision of greater effective memory capacity per die area. The internal refresh functionality of the device provides for all refresh operations to the DRAM memory array to occur transparently to the device user and provides control signals alerting the associated controller when refresh operations are being performed.
申请公布号 US5991851(A) 申请公布日期 1999.11.23
申请号 US19970850802 申请日期 1997.05.02
申请人 ENHANCED MEMORY SYSTEMS, INC. 发明人 ALWAIS, MICHAEL;MOBLEY, KENNETH J.
分类号 G11C11/41;G11C11/401;G11C11/406;(IPC1-7):G06F12/00 主分类号 G11C11/41
代理机构 代理人
主权项
地址