Methods and circuits for single-memory cell multivalue data storage

摘要

Multivalued memory cell 300 includes a latch 300 having a latching node operating between a variable voltage rail and a fixed voltage rail. Circuitry 303 allows for latching of node to a voltage level of the variable voltage rail, the voltage level at the latched node representing a data value. Circuitry 303 provides for the outputing of the voltage level from the latched node.