发明名称 |
Light emitting device with cap layer |
摘要 |
A light emitting device includes a cladding layer composed of a III-V group nitride system semiconductor of a first conductivity type, an active layer formed on the cladding layer of the first conductivity type and composed of a III-V group nitride system semiconductor containing In, an undoped cap layer formed on the active layer and composed of a III-V group nitride system semiconductor, and a cladding layer formed on the cap layer and composed of a III-V group nitride system semiconductor of a second conductivity type.
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申请公布号 |
US5990496(A) |
申请公布日期 |
1999.11.23 |
申请号 |
US19970847471 |
申请日期 |
1997.04.25 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
KUNISATO, TATSUYA;KANO, TAKASHI;UEDA, YASUHIRO;MATSUSHITA, YASUHIKO;YAGI, KATSUMI |
分类号 |
H01L33/00;H01L33/06;H01L33/12;H01L33/32;H01L33/34;H01S5/00;H01S5/323;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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