Method of manufacturing a semiconductor device

摘要

A method of manufacturing a semiconductor device having a region which is partially thinner than the rest thereof is disclosed. A semiconductor thin layer is formed on an insulating layer by an annealing treatment after implanting ions into the semiconductor substrate at a predetermined depth. A semiconductor material is formed by epitaxial growing to a predetermined thickness on the semiconductor thin layer. The the insulating layer or eliminating the insulating layer and a part of the semiconductor substrate under the insulating layer is eliminated by an etching operation.