发明名称 |
Method of fabricating topside structure of a semiconductor device |
摘要 |
The present method and apparatus provides a thin layer of oxynitride over a device including a patterned metal layer, application of a planarizing SOG layer over the thin oxynitride layer, removal of thin portions of the SOG layer by etching to expose portions of the thin oxynitride layer, and application of a thick oxynitride layer to form a strong bond with the thin oxynitride layer. A thin nitride layer, transparent to UV light, may then be applied to the resulting structure prior to application of plastic packaging material.
|
申请公布号 |
US5989938(A) |
申请公布日期 |
1999.11.23 |
申请号 |
US19970926583 |
申请日期 |
1997.09.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG, HSINGYA ARTHUR;MOHAMED, BANDALI B.;GARG, SHYAM;PICKELSIMER, BRUCE |
分类号 |
H01L21/31;H01L21/3105;H01L21/314;H01L21/316;H01L21/8247;H01L23/29;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/44;H01L21/48;H01L21/00 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|