发明名称 |
Method of using getter layer to improve metal to metal contact resistance at low radio frequency power |
摘要 |
The present invention provides a method of using a getter layer on a semiconductor substrate having a first metal stack formed thereon to improve metal to metal contact resistance. The method comprises the steps of forming a getter layer, which may be titanium, on the first metal stack, wherein the getter layer has a higher affinity for oxygen or a higher getter capability than the first metal stack, substantially removing the getter layer by exposing the getter layer to radiation, and forming a second metal stack, which in an advantageous embodiment may also be titanium, on the first metal stack.
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申请公布号 |
US5989984(A) |
申请公布日期 |
1999.11.23 |
申请号 |
US19970946413 |
申请日期 |
1997.10.07 |
申请人 |
LUCENT TECHNOLOGIES, INC. |
发明人 |
ANDERSON, STEVEN M.;CHETLUR, SUNDAR S. |
分类号 |
H01L21/768;(IPC1-7):H01L21/30;H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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