| 摘要 |
In a method of manufacturing a semiconductor device, laminate structures with a first insulating film as a top film are formed on a semiconductor region having a first conductive type. One of the laminate structures is a gate electrode structure including a second insulating film as a gate insulating film formed on the semiconductor region, a conductive layer as a gate electrode formed on the gate insulating film, and the first insulating film formed on the gate electrode. Next, side wall insulating films are formed on side walls of the gate electrode structure and laminate structures adjacent to the gate electrode structure. Ion implantation of impurity of a second conductive type different from the first conductive type is executed using the side wall insulating films in a self-alignment manner to produce the source/drain regions for a metal-oxide-semiconductor (MOS) transistor. Contacts are formed for source/drain regions formed between the gate electrode structure and the adjacent laminate structures, using the side walls in a self-alignment manner.
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