| 摘要 |
First and second semiconductor substrate samples formed with a first oxide layer with holes and a third semiconductor substrate sample formed with a second oxide layer having no hole are prepared. The first and the third samples are subject to the same contaminating process for contaminating the surface of the first oxide layer of the first sample and the surface within the hole, and the surface of the second oxide layer of the third sample. All of the first and second layers of the first to third samples are dissolved by the HF vapor. The dissolved solutions are collected and analyzed the amount of contaminating material contained in respective solutions. The contamination amount in the hole is derived from the first, second and third contamination amount from an equation: contamination amount in the hole =first contamination amount-second contamination amount-(surface exposing ratioxthird contamination amount) By this, in the process of fabrication of the semiconductor product, metal contaminant within the hole can be analyzed with high sensitivity, and can monitor washing effect.
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