发明名称 |
Wet etching |
摘要 |
Method for wet etching where proper arrangements of the substrates during the growth of the insulation layer is adopted. An insulation layer is prepared on the surface of a substrate at the area where thin film circuits are positioned. On the surfaces of the substrate where the thin film circuits are not positioned are prepared protective layers. During the wet etching the attack by the etchant may be avoided. The material of the insulation layer and the protection layer may be the same. The material of the protection layer may be the photo-resistant used in the wet etching process. The invention also disclosed circuit components prepared with the wet etching of this invention.
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申请公布号 |
US5989442(A) |
申请公布日期 |
1999.11.23 |
申请号 |
US19970783305 |
申请日期 |
1997.01.10 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
HSIEH, HSIEN-FEN;HSU, MING-TEH |
分类号 |
G01L1/22;H01L21/70;(IPC1-7):H01B13/00;B44C1/22 |
主分类号 |
G01L1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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