| 发明名称 |
PROCESS OF PLASMA-CHEMICAL PICKLING OF SILICON-CARRYING MATERIALS |
| 摘要 |
FIELD: manufacture of solid microelectronic devices. SUBSTANCE: process of plasma-chemical pickling of silicon-carrying materials includes pickling through polymer resistive mask with plasma-forming mixture containing sulfur hexafluoride (SF<SB>6</SB>), carbon tetrachloride (CCl<SB>4</SB>), acetone (C<SB>3</SB>H<SB>6</SB>O<SB>2</SB>) and argon Ar with following percentage of components, volume per cent: CCl<SB>4</SB> 3.0.-7.0; Ar 10.0-13.0; C<SB>3</SB>H<SB>6</SB>O<SB>2</SB> 12.0-16.0, SF<SB>6</SB> being the balance. EFFECT: provision for assured pickling of functional layers of different thickness in solid microelectronic devices through polymer resistive masks thanks to increased resistance of masks in process of pickling.
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| 申请公布号 |
RU2141701(C1) |
申请公布日期 |
1999.11.20 |
| 申请号 |
RU19970108839 |
申请日期 |
1997.05.22 |
| 申请人 |
INSTITUT PROBLEM TEKHNOLOGII MIKROEHLEKTRONIKI I O;INST T MIKROEHLEKTRONIKI I O |
发明人 |
RED'KIN S.V.;ARISTOV V.V. |
| 分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
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